Adequate Dimensions for Planar GaAs/Ag Diodes for Microwave Frequencies Using a Series Resistance Approach

Authors- Professor Laith M. Al Taan, Assistant Professor Yussra M. Abdullh, Assistant Professor Huda M. Abd Alqader

Abstract-This work involved calculating the precise dimensions of a Schottky device (GaAs/Ag) that operates at microwave frequencies. The series resistance model was used to determine the closest elliptical shape to the lowest discontinuity value. The metals studied included Gold, Copper, Silver, and Aluminum. When the depletion capacity Cj was fixed, the lowest series resistance (Rs~6.4) was observed for Silver at a cutoff frequency of ~4000GHz. On the other hand, the series resistance was higher for the other metals and had a lower cutoff frequency. The IV electrical characteristics displayed the diode model’s behavior as a rectifier, with an ideality factor reaching1.2 .

DOI: /10.61463/ijset.vol.12.issue4.220