Volume 2 Issue 2 Jan 2014

 

1. MULTI CHANNEL EQUALISATION IN CHANNEL CODES FOR MULTIPLE ANTENNA SYSTEMS       

R.Prakash Kumar

2. Leakage Power Optimization by Sleepy Keeper Gate Replacement Techniques                  

Rupali Asati, Prof. Neeraj Singh

3. Flow Characteristics through Conduit Using Laser Technique

Mahmoud I. A. Elshewey

4. TAUR’S MODEL: AN ANALYTICAL SOLUTION FOR DRAIN CURRENT IN UNDOPED BODY SDG MOSFET

MADHURI PANWAR, NIDHI GOPAL, NAVEEN UPADHYAY

5. IMAGE COMPRESSION TECHNIQUE USING WAVELET TRANSFORMATION

NIDHI GOPAL, MADHURI PANWAR, NAVEEN UPADHYAY

6. AUTOMATIC TELEPHONE ANSWERING MACHINE WITH IMAGE PROCESSING

RICHA SINGH RATHORE, DISHA MALIK

7. 32 BIT ARITHMETIC LOGICAL UNIT (ALU) USING VHDL

DISHA MALIK , RICHA SINGH RATHORE

8. SERVER CLUSTERING TECHNOLOGY & CONCEPT

VAIBHAV MATHUR  M00383937, COMPUTER NETWORK, MIDDLESEX UNIVERSITY

9. A BROADBAND BICONICAL ANTENNA FOR WIDE ANGLE RECEPTION

SAURABH SHUKLA , NAVEEN UPADHYAY

A Review of Recommendation Techniques

Authors- Abhishek Shrivastava

Abstract- On the Internet, the place number about Decisions may be overwhelming, there will be necessary will filter, prioritize Also effectively convey important data so as to allay those issues of the majority of the data overload, which needs to be made a possibility issue will huge numbers Internet user. Recommenders’ techniques work out this issue by looking through huge volume for the rapidly created majority of the data on furnish users with customized content and services. This paper investigates the separate aspects and potentials for distinctive prediction techniques clinched alongside recommendation techniques in place with serve concerning illustration a compass to Scrutinize and act in the field of recommendation techniques.

Silicon-on-Insulator Technology and its Applications, Difficulties, and Shortcomings, and a Comparison

Authors- Assistant Professor Mrs. Seema Chouhan

Abstract- – The many benefits of Silicon on Insulator (SOI) technology over conventional bulk silicon technology have resulted in its rapid rise to prominence and broad acceptance in recent years. The purpose of this article is to offer a high-level overview of SOI technology and associated developments. The insulating substrate in SOI technology is commonly silicon dioxide, and a thin layer of crystalline silicon is fabricated on top of it. The performance of the device is enhanced as a result of the insulating layer’s elimination of parasitic capacitance and reduction of leakage current. Multiple significant advantages have been established for using SOI technology, including greater speed, less power consumption, increased radiation hardiness, and increased resilience to latch-up effects. The many manufacturing processes used, including separation by implantation of oxygen (SIMOX), wafer bonding, and epitaxial growth, are discussed in detail, as are other elements of SOI technology. The efficiency and low cost of SOI devices are affected in different ways by the various methods available for fabricating them. The paper further dives into the unique electrical and thermal features of SOI devices via characterisation and modeling. Interface effects, insulator quality, and silicon layer thickness on device performance and reliability are discussed. The many uses of SOI technology are discussed in the paper as well. These use cases span from microprocessors and memory devices to high-speed communication circuits and RFICs. It demonstrates the benefits of SOI technology in various contexts and the notable gains made in terms of throughput, power efficiency, and integration density. The opportunities and threats that SOI technology faces in the future are also discussed. It discusses ongoing research aiming at enhancing the performance of SOI devices and overcoming the limits of present manufacturing processes. The integration of SOI with other advanced materials and the development of unique device topologies are two key areas discussed in the review.