International Journal of Science, Engineering and TechnologyAuthors: Dr. Osman Zenk
Abstract: This study provides a detailed theoretical and simulation-based comparison of two fundamental memristor models: the Joglekar model and the Pickett model. The Joglekar model represents a phenomenological approach that introduces a symmetric, state-dependent window function to enforce nonlinear dopant drift, offering computational efficiency and numerical stability. In contrast, the Pickett model constitutes a physics-based framework derived from experimental titanium dioxide thin-film devices, explicitly describing ionic drift dynamics and quantum mechanical tunneling through highly nonlinear, experimentally-parameterized equations. This comprehensive analysis elucidates the core mathematical principles, implementation strategies, parameter sensitivities, and application domains of each model. Furthermore, we provide functional, well-documented MATLAB code implementations that demonstrate the inherent trade-off between simulation efficiency and physical accuracy. Our parametric analysis reveals that while the Joglekar model achieves rapid, stable simulation suitable for large-scale circuit design, the Pickett model provides superior physical fidelity at the cost of computational complexity. The results underscore that the Joglekar model excels in efficient circuit simulation and educational contexts, while the Pickett model serves as an essential benchmark for accurate device characterization and physical mechanism studies.
DOI: https://doi.org/10.5281/zenodo.18137859
