Thermoelectric Transport Behavior of Gallium Arsenide Nano-Wire

Authors- Dr. M. P. Singh

Abstract-– In the paper, we have study thermoelectric transport behaviour of GaAs nanowire by the formulation based on the Boltzmann relaxation time approach for acoustic phonon scattering. For pure acoustic phonon scattering below 1000 K, the Seebeck coefficient of GaAs nanowires changes from a maximum value to a minimum value in the range of 180-235 µV/K. At low temperature below 100K GaAs nano wire semi metallic to semiconducting behaviour. At high temperature value of ZT at optimum carrier density 0.6 and operating temperature range is longer. The GaAs nanowire are useful for geothermal energy generation.

DOI: /10.61463/ijset.vol.13.issue2.339